Wide-bandgap technologies, silicon carbide (SiC) and gallium nitride (GaN), are transforming power applications by enabling faster switching, higher efficiency, and greater power density than traditional silicon devices, allowing engineers to design smaller, lighter, and more energy-efficient power systems. We spoke to some Nexperia executives, Filippo Scrimizzi and Olaf Vogt, about their impressions and perspectives on the power semiconductor marketplace.
