Applied Materials launched the Endura HAR Cobalt PVD tool for periphery contacts, and the Endura Versa XLR W PVD tool for memory gate electrodes to address DRAM scaling challenges at 2Xnm nodes. In a podcast interview, Kevin Moraes, Director of Product Management for Metal Deposition Products, at Applied Materials, explains how the Versa XLR W PVD chamber enables lower gate resistance required for 2Xnm DRAM applications. He also discusses the impetus behind the HAR Cobalt PVD chamber and the need to transition from TiSi2 to cobalt.
The two products (PVD Co) replace the much cheaper TiCl4 process, which has been used for many years. Moraes notes that though TiCl4 is cheaper, it has shortcomings. An interesting side note to the introduction of these products, is that using PVD instead of CVD runs counter to industry expectations. In the recorded interview, Moreas provides the background on why PVD is better than CVD for these DRAM applications.
